Investigation of InGaAs/InP photodiode surface passivation using epitaxial regrowth of InP via photoluminescence and photocurrent.
BRAGA, Osvaldo de Melo; DELFINO, Cristian Anderson; KAWABATA, Rudy Massami Sakamoto; PINTO, Luciana Dornelas; VIEIRA, Gustavo Soares; PIRES, Mauricio Pamplona; SOUZA, Patrícia Lustoza de; MAREGA JÚNIOR, Euclydes; CARLIN, John Anthony; KRISHNA, Sanjay.
BRAGA, Osvaldo de Melo; DELFINO, Cristian Anderson; KAWABATA, Rudy Massami Sakamoto; PINTO, Luciana Dornelas; VIEIRA, Gustavo Soares; PIRES, Mauricio Pamplona; SOUZA, Patrícia Lustoza de; MAREGA JÚNIOR, Euclydes; CARLIN, John Anthony; KRISHNA, Sanjay.
Abstract: The viability of epitaxial regrowth of InP to passivate lateral mesa surfaces of lattice-matched InGaAs/InP photodiodes is investigated. The effect of the passivation is quantified via a proposed method that uses multi- wavelength photoluminescence to determine the surface recombination velocity (SRV). The effective minority charge lateral diffusion length is also obtained using photocurrent measurements with flood illumination. We propose a methodology where this data can be used together with the SRV to estimate the absorber layer minority charge lifetime. A surface recombination velocity of (3.7±0.1)×10 4 cms-1 was found for the InGaAs/ regrown InP interface, which represents a reduction of 2 orders of magnitude when compared to the value of (6.3±0.1)×10 6 cms-1 obtained for an unpassivated InGaAs surface.
@article={003125682,author = {BRAGA, Osvaldo de Melo; DELFINO, Cristian Anderson; KAWABATA, Rudy Massami Sakamoto; PINTO, Luciana Dornelas; VIEIRA, Gustavo Soares; PIRES, Mauricio Pamplona; SOUZA, Patrícia Lustoza de; MAREGA JÚNIOR, Euclydes; CARLIN, John Anthony; KRISHNA, Sanjay.},title={Investigation of InGaAs/InP photodiode surface passivation using epitaxial regrowth of InP via photoluminescence and photocurrent},journal={Materials Science in Semiconductor Processing},note={v. 154, p. 107200-1-107200-7},year={2023}}