Incubation effect during laser micromachining of GaN films with femtosecond pulses.
ALMEIDA, Gustavo Foresto Brito de; NOLASCO, Lucas Konaka; BARBOSA, Gustavo Rocha; SCHNEIDER, A.; JAROS, A.; CLAVERO, I. Manglano; MARGENFELD, C.; WAAG, A.; VOSS, T.; MENDONÇA, Cleber Renato.
ALMEIDA, Gustavo Foresto Brito de; NOLASCO, Lucas Konaka; BARBOSA, Gustavo Rocha; SCHNEIDER, A.; JAROS, A.; CLAVERO, I. Manglano; MARGENFELD, C.; WAAG, A.; VOSS, T.; MENDONÇA, Cleber Renato.
 Abstract: We studied the evolution of the incubation effect during fs-laser micromachining of gallium nitride films with the number of laser pulses applied per sample surface area. The damage threshold fluence was measured using the zero-damage method and reduced from (0.61 ± 0.01) J/cm2 to (0.05 ± 0.03) J/cm2 when increasing the number of applied laser pulses from single-shot excitation to 105 pulses per spot, respectively. By applying the exponential defect accumulation model to the experimental incubation data, we determined a small value for the incubation parameter of (0.011 ± 0.001), indicating that gallium nitride has slow incubation dynamics. This information is important to achieve the desired control and high efficiency of fs-laser processing of gallium-nitride-based samples. | |
| Journal of Materials Science |
| v. 30, n. 18, p. 16821-16826 - Ano: 2019 |
| Fator de Impacto: 3,442 |
| http://dx.doi.org/10.1007/s10854-019-01373-2 |  @article={002967426,author = {ALMEIDA, Gustavo Foresto Brito de; NOLASCO, Lucas Konaka; BARBOSA, Gustavo Rocha; SCHNEIDER, A.; JAROS, A.; CLAVERO, I. Manglano; MARGENFELD, C.; WAAG, A.; VOSS, T.; MENDONÇA, Cleber Renato.},title={Incubation effect during laser micromachining of GaN films with femtosecond pulses},journal={Journal of Materials Science},note={v. 30, n. 18, p. 16821-16826},year={2019}} |