Abstract – Publication

Revealing localized excitons in WSe2/ß-Ga2O3.
CAVALINI, Camila; RABAHI, César Ricardo; BRITO, Caique Serati de; LEE, Eunji; TOLEDO, José Roberto de; CAZETTA, Felipe Faria; OLIVEIRA, Raphael Brenon Fernandes de; ANDRADE, Marcelo Barbosa de; HENINI, Mohamed; ZHANG, Yuhao; KIM, Jeongyong; BARCELOS, Ingrid David; GOBATO, Yara Galvão.
Abstract: We have investigated the optical and magneto-optical properties of monolayer (ML) WSe2 on flakes of b-Ga2O3 under high magnetic fields. Remarkably, sharp emission peaks were observed and associated with localized excitons related to point defects. A detailed study of low-temperature photoluminescence (PL) and magneto-PL under high perpendicular magnetic field up to 9 T was carried out. Several sharp emission peaks have shown valley g-factors values close to -4, which is an unusual result for localized excitons in WSe2. Furthermore, some PL peaks have shown higher g-factor values of =~7 and =~12, which were associated with the hybridization of strain localized dark excitons and defects. The reported results suggest that b-Ga2O3 is, indeed, a promising dielectric substrate for ML WSe2 and also to explore fundamental physics in view of possible applications in quantum information technology.
Applied Physics Letters
v. 124, n. 14, p. 142104-1-142104-7 + supplementary material - Ano: 2024
Fator de Impacto: 4,0
    @article={003189199,author = {CAVALINI, Camila; RABAHI, César Ricardo; BRITO, Caique Serati de; LEE, Eunji; TOLEDO, José Roberto de; CAZETTA, Felipe Faria; OLIVEIRA, Raphael Brenon Fernandes de; ANDRADE, Marcelo Barbosa de; HENINI, Mohamed; ZHANG, Yuhao; KIM, Jeongyong; BARCELOS, Ingrid David; GOBATO, Yara Galvão.},title={Revealing localized excitons in WSe2/ß-Ga2O3},journal={Applied Physics Letters},note={v. 124, n. 14, p. 142104-1-142104-7 + supplementary material},year={2024}}

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