Raman spectroscopy of GaSb1-xBix alloys with high Bi content.
SOUTO, Sérgio Paulo Amaral; GOBATO, Y. Galvão; SOUZA, D.; ANDRADE, Marcelo Barbosa de; KOIVUSALO, E.; PUUSTINEN, J.; GUINA, M.
SOUTO, Sérgio Paulo Amaral; GOBATO, Y. Galvão; SOUZA, D.; ANDRADE, Marcelo Barbosa de; KOIVUSALO, E.; PUUSTINEN, J.; GUINA, M.
Abstract: We report on the crystal morphology and Raman scattering features of high structural quality GaSb1 xBix alloys grown by molecular beam epitaxy with a high Bi content (x up to 0.10). The Raman spectra were measured at room temperature with different laser excitation wavelengths of 532 nm, 633 nm, and 785 nm. We observed well-defined Bi-induced Raman peaks associated with atomic Bin clusters and GaBi vibrational modes. Remarkably, some Bi-induced Raman modes were strongly enhanced when the laser energy was selected near an optical transition for the 5.8%Bi sample. This effect was attributed to a Raman resonant effect near an excited optical transition of the GaSbBi layer and has been used to identify the nature of the observed Raman peaks.
@article={002996926,author = {SOUTO, Sérgio Paulo Amaral; GOBATO, Y. Galvão; SOUZA, D.; ANDRADE, Marcelo Barbosa de; KOIVUSALO, E.; PUUSTINEN, J.; GUINA, M.},title={Raman spectroscopy of GaSb1-xBix alloys with high Bi content},journal={Applied Physics Letters},note={v. 116, n. 20, p. 202103-1-202103-5},year={2020}}