Group of Semiconductors (GSE)

Coordinator: Prof. Dr. Iouri Poussep

Secretariat office:
Daniel Foschini Pereira –
Phone: +55 16 3373-8085 (branch 211)

We used the techniques of photoluminescence spectroscopy, time resolved photoluminescence, Raman scattering spectroscopy and magneto-transport. Also, structural, opto-electronic and optical properties of wells, wires and quantum dots are studied, as well as their applications in opto-electronic devices. We investigated GaAs/AlGaAs, GaAs/InGaAs and InGaAs/InP heterostructures grown by molecular beam epitaxy (MBE). The measurements are carried out in the visible and infrared spectroscopic region, with temporal resolution up to 1 ns, with temperatures ranging from 1.5 – 300K, in magnetic fields up to 15 Tesla. The research is focused mainly on recombination processes and the properties of low-dimensional electron systems formed in semiconductor heterostructures such as collective effects, localization and electron coherence.

  Faculty Staff   Phone
Iouri Poussep+55 16 33738076
  Research and Administrative Staff   Ramal
Carlos Alberto de Souza+55 16 33739812
Haroldo Arakaki+55 16 33739812
Contact us
São Carlos Institute of Physics - IFSC
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