High-yield fabrication of electrolyte-gated transistors based on graphene acetic acid.
ILIE, Georgian Giani; FRANCHIN, Lara; BATTEL, Ludovica Pradetto; BONALDO, Stefano; PACCAGNELLA, Alessandro; VIZIO, Biagio Di; AGNOLI, Stefano; FERREIRA, Rafael Cintra Hensel; RICCIARDULLI, Antonio Gaetano; BATTISTON, Simone; SAMBI, Mauro; SEDONA, Francesco; SAMORÌ, Paolo; CASALINI, Stefano.
ILIE, Georgian Giani; FRANCHIN, Lara; BATTEL, Ludovica Pradetto; BONALDO, Stefano; PACCAGNELLA, Alessandro; VIZIO, Biagio Di; AGNOLI, Stefano; FERREIRA, Rafael Cintra Hensel; RICCIARDULLI, Antonio Gaetano; BATTISTON, Simone; SAMBI, Mauro; SEDONA, Francesco; SAMORÌ, Paolo; CASALINI, Stefano.
Abstract: Liquid-gated transistors (LGTs) are versatile devices for low-power electronics, in-field sensors, and neuromorphic devices. Among functionalized graphene-based materials, graphene acetic acid (GAA) has been successfully integrated into LGTs as a prototypical solution-processable 2D material with controlled surface chemistry and a conductivity of 1.8 mS/m. Like other liquid-phase exfoliated 2D materials, the printing of GAA networks into micropatterns on arbitrary surfaces represents a major challenge. To overcome this limitation, we leverage a dielectrophoretic-based approach to fabricate GAA films with an average thickness of 470 nm. Our fabrication strategy offers several advantages: (i) high reliability (i.e. ? 100% success rate out of more than 25 fabricated devices); (ii) small amount of active material required (< 30 µL of a 0.2 mg/mL of GAA), (iii) high spatial-resolution (i.e. the deposition efficiency scales inversely with electrodes distance), and (iv) no further post-processing steps. Our GAA-based LGTs exhibit lower channel resistance (10-30 kO) than drop-cast counterparts, negligible gate leakage current (10-50 nA), and modest hysteresis. Moreover, hole/electron mobility of 10-1 cm2V-1s-1 and a Dirac voltage close to -189 mV have been demonstrated. Furthermore, these devices exhibit a stable electrical response when exposed to air for 4 h and to continuous bias stress for 30 min.
@article={003306072,author = {ILIE, Georgian Giani; FRANCHIN, Lara; BATTEL, Ludovica Pradetto; BONALDO, Stefano; PACCAGNELLA, Alessandro; VIZIO, Biagio Di; AGNOLI, Stefano; FERREIRA, Rafael Cintra Hensel; RICCIARDULLI, Antonio Gaetano; BATTISTON, Simone; SAMBI, Mauro; SEDONA, Francesco; SAMORÌ, Paolo; CASALINI, Stefano.},title={High-yield fabrication of electrolyte-gated transistors based on graphene acetic acid},journal={Advanced Electronic Materials},note={v. 12, n. 10, p. e00570-1-e00570-10 + Supporting Information},year={2026}}