GaAs semiconductor passivated by (NH4)2Sx: analysis of different passivation methods using electrical characteristics and XPS measurements.
MAHMOODNIA, H.; SALEHI, A.; MASTELARO, Valmor Roberto.
MAHMOODNIA, H.; SALEHI, A.; MASTELARO, Valmor Roberto.
Abstract: Some of the III-V semiconductor used in various devices suffer from the surface high density of states limiting their application. This study compares and evaluates five different ammonium sulfide passivation methods on GaAs surface with the aim to enhance the electrical characteristics of A
@article={003000347,author = {MAHMOODNIA, H.; SALEHI, A.; MASTELARO, Valmor Roberto.},title={GaAs semiconductor passivated by (NH4)2Sx: analysis of different passivation methods using electrical characteristics and XPS measurements},journal={Semiconductors},note={v. 54, n. 7, p. 817-826},year={2020}}