Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption.
MARTINS, R. J.; SIQUEIRA, J. P.; CLAVERO, I. Manglano; MARGENFELD, C.; FÜNDLING, S.; VOGT, A.; WAAG, A.; VOSS, T.; MENDONÇA, Cleber Renato.
MARTINS, R. J.; SIQUEIRA, J. P.; CLAVERO, I. Manglano; MARGENFELD, C.; FÜNDLING, S.; VOGT, A.; WAAG, A.; VOSS, T.; MENDONÇA, Cleber Renato.
 Abstract: We studied the near-band-edge emission (NBE) and yellow defect luminescence (YL) of GaN under below bandgap excitation with 40-fs laser pulses at a wavelength of 775 nm. Even though in this case three-photon absorption processes are required for the excitation of band-to-band transitions, fourthorder (INBE/Iexc 4) and sub-linear (IYL/Iexc 0.5) dependencies were observed for the intensity of the NBE and YL as a function of the excitation intensity, respectively. Modelling the carrier dynamics with a few-level rate-equation model revealed that, for high excitation irradiances, the electron-hole population generated by three-photon absorption is such that the NBE recombination rate is intensified (exponent>3) and, at the same time, the competition between the electron capturing and the defect-level emission rate suppresses the YL (exponent<1). | |
| Journal of Applied Physics |
| v. 123, n. 24, p. 243101-1-243101-5 - Ano: 2018 |
| Fator de Impacto: 2,176 |
| http://dx.doi.org/10.1063/1.5027395 |  @article={002891226,author = {MARTINS, R. J.; SIQUEIRA, J. P.; CLAVERO, I. Manglano; MARGENFELD, C.; FÜNDLING, S.; VOGT, A.; WAAG, A.; VOSS, T.; MENDONÇA, Cleber Renato.},title={Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption},journal={Journal of Applied Physics},note={v. 123, n. 24, p. 243101-1-243101-5},year={2018}} |
